ZERO MASK HIGH DENSITY CAPACITOR

• Main Authors: WU CHIA TIEN, HSIEH CHENG HSIANG, CHEN CHUNG HUI, CHEN WAN TE
• Format: Patent
• Language: English; Korean
• Published: 03.12.2020
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Provided are methods for eliminating use of additional masks, and semiconductor devices. A first interconnect layer is formed. A first resistive layer is formed on an upper portion of the first interconnect layer. A dielectric layer is formed on an upper portion of the first resistive layer. A secon...