ZERO MASK HIGH DENSITY CAPACITOR
Provided are methods for eliminating use of additional masks, and semiconductor devices. A first interconnect layer is formed. A first resistive layer is formed on an upper portion of the first interconnect layer. A dielectric layer is formed on an upper portion of the first resistive layer. A secon...
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| Main Authors | , , , |
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| Format | Patent |
| Language | English Korean |
| Published |
03.12.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | Provided are methods for eliminating use of additional masks, and semiconductor devices. A first interconnect layer is formed. A first resistive layer is formed on an upper portion of the first interconnect layer. A dielectric layer is formed on an upper portion of the first resistive layer. A second resistive layer is formed on an upper portion of the dielectric layer.
추가 마스크의 사용을 제거하는 방법 및 반도체 다바이스가 본 명세서에 설명된다. 제 1 상호 접속 층이 형성된다. 제 1 상호 접속 층의 상부에 제 1 저항 층이 형성된다. 제 1 저항 층의 상부에 유전체 층이 형성된다. 유전체 층의 상부에 제 2 저항 층이 형성된다. |
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| AbstractList | Provided are methods for eliminating use of additional masks, and semiconductor devices. A first interconnect layer is formed. A first resistive layer is formed on an upper portion of the first interconnect layer. A dielectric layer is formed on an upper portion of the first resistive layer. A second resistive layer is formed on an upper portion of the dielectric layer.
추가 마스크의 사용을 제거하는 방법 및 반도체 다바이스가 본 명세서에 설명된다. 제 1 상호 접속 층이 형성된다. 제 1 상호 접속 층의 상부에 제 1 저항 층이 형성된다. 제 1 저항 층의 상부에 유전체 층이 형성된다. 유전체 층의 상부에 제 2 저항 층이 형성된다. |
| Author | CHEN CHUNG HUI WU CHIA TIEN CHEN WAN TE HSIEH CHENG HSIANG |
| Author_xml | – fullname: WU CHIA TIEN – fullname: HSIEH CHENG HSIANG – fullname: CHEN CHUNG HUI – fullname: CHEN WAN TE |
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| RelatedCompanies | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
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| Snippet | Provided are methods for eliminating use of additional masks, and semiconductor devices. A first interconnect layer is formed. A first resistive layer is... |
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| SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| Title | ZERO MASK HIGH DENSITY CAPACITOR |
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