METAL COMPOUND AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

• Main Authors: KOIDE TAKANORI, CHO YOUNJOUNG, YAMASHITA ATSUSHI, HARANO KAZUKI, PARK GYU HEE, LIM JAESOON, RYU SEUNG MIN, LEE SOYOUNG, SAITO AKIO
• Format: Patent
• Language: English; Korean
• Published: 25.11.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

According to the present invention, a metal compound and a method of manufacturing a semiconductor device using the same are provided. According to an embodiment of the present invention, a metal compound may contain a material represented by chemical formula 1. 본 발명에 따르면 금속 화합물 및 이를 사용한 반도체 소자의 제조 방법이 제공된다. 실시예들에 따르면, 금속 화합물은 화학식 1로 표시되는 물질을 포함할 수 있다. [화학식 1] JPEGpat00026.jpg4190