METHOD FOR FORMING SILICON DIOXIDE THIN FILM
The present invention relates to a method for forming a silicon oxide film capable of efficiently forming a silicon oxide film with high density and high insulation resistance while suppressing damage to the process at a relatively low film-forming temperature without actually using a strong oxidize...
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Main Authors | , , , |
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Format | Patent |
Language | English Korean |
Published |
04.11.2020
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a method for forming a silicon oxide film capable of efficiently forming a silicon oxide film with high density and high insulation resistance while suppressing damage to the process at a relatively low film-forming temperature without actually using a strong oxidizer (O_3, O_2 plasma, and the like). The present invention relates to the method for forming the silicon oxide film in gas, comprising: supplying halogenated silicon including bromine (for example, SiBr_4), H_2O, and C_5H_5N into a film-forming apparatus; and forming a silicon oxide film in the gas in the film-forming apparatus.
(과제) 본 발명은, 강력한 산화제(O3, O2 플라스마 등)를 실질적으로 사용하지 않고, 비교적 저온하에서의 성막온도에 있어서, 프로세스의 대미지를 억제하면서 고밀도·고절연내성의 산화규소막을 효율적으로 형성할 수 있는 기술을 제공한다. (해결수단) 본 발명은, 기체 상에 산화규소막을 형성하는 방법으로서, 성막장치 내에 브롬을 포함하는 할로겐화규소(예를 들면, SiBr4), H2O, C5H5N이 공급되고, 성막장치 내의 기체 상에 산화규소막이 형성되는 산화규소막 형성방법에 관한 것이다. |
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Bibliography: | Application Number: KR20190109344 |