SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

• Main Author: SHIMOMURA SHINICHIRO
• Format: Patent
• Language: English; Korean
• Published: 30.10.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; SEMICONDUCTOR DEVICES

The present invention provides a technology capable of suppressing the occurrence of corrosion around a removal interface in a technology for removing a copper film from a peripheral unit of a substrate on which a copper film is formed. A substrate processing method according to the present disclosure includes a preheating process and a removal process. The preheating process heats the substrate on which the copper film is formed. The removal process removes the copper film formed on a peripheral unit by supplying a processing liquid containing an acidic chemical solution with respect to the peripheral unit of the substrate after the preheating process. 구리막이 형성된 기판의 주연부로부터 구리막을 제거하는 기술에 있어서, 제거 계면 주변에 있어서의 부식의 발생을 억제할 수 있는 기술을 제공하는 것이다. 본 개시에 따른 기판 처리 방법은, 사전 가열 공정과, 제거 공정을 포함한다. 사전 가열 공정은 구리막이 형성된 기판을 가열한다. 제거 공정은 사전 가열 공정 후의 기판의 주연부에 대하여, 산성 약액을 함유하는 처리액을 공급하여 주연부에 형성된 구리막을 제거한다.