CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER USING THE SAME
The present invention relates to a CMP slurry composition for polishing a tungsten pattern wafer, comprising: at least one of a polar solvent and a non-polar solvent; an abrasive; at least one of a compound represented by chemical formula 1 and chemical formula 2; and tetrabutylammonium hydroxide, a...
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| Main Authors | , , , |
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| Format | Patent |
| Language | English Korean |
| Published |
07.10.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The present invention relates to a CMP slurry composition for polishing a tungsten pattern wafer, comprising: at least one of a polar solvent and a non-polar solvent; an abrasive; at least one of a compound represented by chemical formula 1 and chemical formula 2; and tetrabutylammonium hydroxide, and to a method for polishing a tungsten pattern wafer. In addition, the CMP slurry composition for polishing a tungsten pattern wafer can increase flatness.
극성 용매, 비극성 용매 중 1종 이상; 연마제; 화학식 1의 화합물, 화학식 2의 화합물 중 1종 이상; 테트라부틸암모늄히드록시드를 포함하는 것인, 텅스텐 패턴 웨이퍼 연마용 CMP 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법이 제공된다. |
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| AbstractList | The present invention relates to a CMP slurry composition for polishing a tungsten pattern wafer, comprising: at least one of a polar solvent and a non-polar solvent; an abrasive; at least one of a compound represented by chemical formula 1 and chemical formula 2; and tetrabutylammonium hydroxide, and to a method for polishing a tungsten pattern wafer. In addition, the CMP slurry composition for polishing a tungsten pattern wafer can increase flatness.
극성 용매, 비극성 용매 중 1종 이상; 연마제; 화학식 1의 화합물, 화학식 2의 화합물 중 1종 이상; 테트라부틸암모늄히드록시드를 포함하는 것인, 텅스텐 패턴 웨이퍼 연마용 CMP 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법이 제공된다. |
| Author | KIM WON JUNG PARK TAE WON LEE JI HO LEE EUI RANG |
| Author_xml | – fullname: PARK TAE WON – fullname: KIM WON JUNG – fullname: LEE EUI RANG – fullname: LEE JI HO |
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| DocumentTitleAlternate | 텅스텐 패턴 웨이퍼 연마용 ＣＭＰ 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법 |
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| Notes | Application Number: KR20190033745 |
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| RelatedCompanies | SAMSUNG SDI CO., LTD |
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| Snippet | The present invention relates to a CMP slurry composition for polishing a tungsten pattern wafer, comprising: at least one of a polar solvent and a non-polar... |
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| SubjectTerms | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES |
| Title | CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER USING THE SAME |
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