CMP SLURRY COMPOSITION FOR POLISHING TUNGSTEN PATTERN WAFER AND METHOD FOR POLISHING TUNGSTEN PATTERN WAFER USING THE SAME

The present invention relates to a CMP slurry composition for polishing a tungsten pattern wafer, comprising: at least one of a polar solvent and a non-polar solvent; an abrasive; at least one of a compound represented by chemical formula 1 and chemical formula 2; and tetrabutylammonium hydroxide, a...

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Bibliographic Details
Main Authors PARK TAE WON, KIM WON JUNG, LEE EUI RANG, LEE JI HO
Format Patent
LanguageEnglish
Korean
Published 07.10.2020
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
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Summary:The present invention relates to a CMP slurry composition for polishing a tungsten pattern wafer, comprising: at least one of a polar solvent and a non-polar solvent; an abrasive; at least one of a compound represented by chemical formula 1 and chemical formula 2; and tetrabutylammonium hydroxide, and to a method for polishing a tungsten pattern wafer. In addition, the CMP slurry composition for polishing a tungsten pattern wafer can increase flatness. 극성 용매, 비극성 용매 중 1종 이상; 연마제; 화학식 1의 화합물, 화학식 2의 화합물 중 1종 이상; 테트라부틸암모늄히드록시드를 포함하는 것인, 텅스텐 패턴 웨이퍼 연마용 CMP 슬러리 조성물 및 이를 이용한 텅스텐 패턴 웨이퍼 연마 방법이 제공된다.
Bibliography:Application Number: KR20190033745