200 ns OLEDOLED WITH TRIPLET EMITTER AND EXCITED STATE LIFETIME LESS THAN 200 NS

Provided is an emissive device including a phosphorescent emitter placed within a threshold distance of an enhancement layer to achieve transient lifetime of 200 ns or less. The emissive device comprises: a first electrode; a second electrode; and an emission stack including a phosphorescent emittin...

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Bibliographic Details
Main Authors BROWN JULIA J, WEAVER MICHAEL STUART, FUSELLA MICHAEL, THOMPSON NICHOLAS J
Format Patent
LanguageEnglish
Korean
Published 23.09.2020
Subjects
ELECTRICITY
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Summary:Provided is an emissive device including a phosphorescent emitter placed within a threshold distance of an enhancement layer to achieve transient lifetime of 200 ns or less. The emissive device comprises: a first electrode; a second electrode; and an emission stack including a phosphorescent emitting material disposed between the first electrode and the second electrode. 200 ns 이하의 과도 수명을 달성하기 위해 증강층(enhancement layer)의 임계 거리 내에 배치된 인광 이미터를 포함하는 발광 디바이스가 제공된다.
Bibliography:Application Number: KR20200030750