AN ETCHANT COMPOSITION AND AN EHTING METHOD AND A MEHTOD FOR FABRICATION METAL PATTERN USING THE SAME

The present invention relates to an etchant composition not comprising nitric acid, comprising: (A) phosphoric acid; (B) ammonium nitrate; and (C) water, and for etching at least one of a tungsten (W) film and a titanium nitride (TiN) film, and to an etching method and a method for forming a metal p...

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Bibliographic Details
Main Authors KIM TAE HEE, YOO JAE SUNG, KIM HAN CHEOL, YANG JIN SEOK
Format Patent
LanguageEnglish
Korean
Published 16.09.2020
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to an etchant composition not comprising nitric acid, comprising: (A) phosphoric acid; (B) ammonium nitrate; and (C) water, and for etching at least one of a tungsten (W) film and a titanium nitride (TiN) film, and to an etching method and a method for forming a metal pattern using the same. In addition, the etchant composition has excellent etching uniformity. In addition, the etchant composition has excellent etching uniformity. 본 발명은, 질산을 포함하지 않으며, (A) 인산, (B) 질산암모늄 및 (C) 물을 포함하고, 텅스텐(W)막 및 티타늄 질화물(TiN)막 중 하나 이상을 식각하기 위한 것인, 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법을 제공한다.
Bibliography:Application Number: KR20190026082