정제된 형상 및 미세구조를 갖는 구리 합금 스퍼터링 타겟을 형성하는 방법

• Main Authors: FERRASSE STEPHANE, NOLANDER IRA G, ALFORD FRANK C, UNDERWOOD PATRICK, TURNER ERIK L
• Format: Patent
• Language: Korean
• Published: 10.09.2020
• Subjects: AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKINGWITHOUT ESSENTIALLY REMOVING MATERIAL; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES,OTHERWISE THAN BY ROLLING; MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVINGMATERIAL; METALLURGY; PERFORMING OPERATIONS; PUNCHING METAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

구리 망간 빌렛이 제1 일방향 단조 단계를 거치게 하는 단계, 약 650℃ 내지 약 750℃의 온도로 구리 망간 빌렛을 가열하는 단계, 구리 망간 빌렛이 제2 일방향 단조 단계를 거치게 하는 단계, 및 약 500℃ 내지 약 650℃의 온도로 구리 망간 빌렛을 가열하여 구리 합금을 형성하는 단계를 포함하는, 구리 망간 스퍼터링 타겟을 형성하는 방법. A method of forming a copper manganese sputtering target including subjecting a copper manganese billet to a first unidirectional forging step, heating the copper manganese billet to a temperature from about 650° C. to about 750° C., subjecting the copper manganese billet to a second unidirectional forging step, and heating the copper manganese billet to a temperature from about 500° C. to about 650° C. to form a copper alloy.