FILM FORMING METHOD

Provided is a film forming method comprising a film forming process of forming a nitride film on a surface of the substrate and a plasma purge process performed after the film forming process. The film forming step includes: a process of forming an adsorption inhibitor by supplying and adsorbing chl...

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Bibliographic Details
Main Authors TAKAHASHI YUTAKA, KARAKAWA TAKAYUKI, KUBO KAZUMI
Format Patent
LanguageEnglish
Korean
Published 11.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a film forming method comprising a film forming process of forming a nitride film on a surface of the substrate and a plasma purge process performed after the film forming process. The film forming step includes: a process of forming an adsorption inhibitor by supplying and adsorbing chlorine gas activated by plasma to the surface of the substrate; a process of supplying source gas containing silicon or metal and chlorine to the surface of the substrate and adsorbing the source gas to a region where the adsorption inhibitor is not formed; and a process of supplying nitride gas to the surface of the substrate and depositing a nitride film by reaction with the source gas. In the plasma purge process, a rare gas activated by plasma is supplied. 기판의 표면에 질화막을 성막하는 성막 공정과, 상기 성막 공정의 후에 행하는 플라스마 퍼지 공정을 갖고, 상기 성막 공정은, 상기 기판의 표면에, 플라스마에 의해 활성화된 염소 가스를 공급하여 흡착시켜, 흡착 저해기를 형성하는 공정과, 상기 기판의 표면에, 실리콘 또는 금속과 염소를 함유하는 원료 가스를 공급하고, 상기 흡착 저해기가 형성되지 않은 영역에 상기 원료 가스를 흡착시키는 공정과, 상기 기판의 표면에, 질화 가스를 공급하고, 상기 원료 가스와의 반응에 의해 질화막을 퇴적시키는 공정을 포함하며, 상기 플라스마 퍼지 공정은, 플라스마에 의해 활성화된 희가스를 공급한다.
Bibliography:Application Number: KR20200007055