원료 공급 방법 및 실리콘 단결정의 제조 방법

• Main Authors: KANEHARA TAKAHIRO, KAWAKAMI RUI, YOKOYAMA RYUSUKE
• Format: Patent
• Language: Korean
• Published: 10.08.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

원료 공급 방법은, 실리콘 융액의 표면을 고화시키는 고화 공정과, 고화 공정에서 형성된 고화 부분에, 고형 원료를 투하하는 투하 공정과, 고화 부분 및 고형 원료를 용해하는 융해 공정을 구비하고, 투하 공정은, 0테슬라 초과 0.05테슬라 이하의 횡자장을 실리콘 융액에 인가한 상태로, 고형 원료를 투하한다. This method for supplying a raw material comprises a solidification step for solidifying the surface of a silicon melt, a dropping step for dropping a solid raw material to a solidified portion formed in the solidification step, and a melting step for melting the solidified portion and the solid raw material. In the dropping step, the solid raw material is dropped with a transverse magnetic field of more than 0 tesla and not more than 0.05 tesla being applied to the silicon melt.