FILM FORMING METHOD

Provided is a film forming method, which includes the processes of: activating chlorine gas in a plasma generator; forming an adsorption inhibitor group by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber; absorbing a source gas containing chlorine and one of...

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Bibliographic Details
Main Authors TAKAHASHI YUTAKA, KARAKAWA TAKAYUKI, KUBO KAZUMI
Format Patent
LanguageEnglish
Korean
Published 07.08.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Provided is a film forming method, which includes the processes of: activating chlorine gas in a plasma generator; forming an adsorption inhibitor group by adsorbing the activated chlorine gas on a surface of a substrate in a processing chamber; absorbing a source gas containing chlorine and one of silicon and a metal on a region without the adsorption inhibitor group of the surface of the substrate; depositing a nitride film by supplying a nitriding gas to the surface of the substrate and causing the nitriding gas to react with the source gas; carrying out the substrate on which the nitride film is deposited from the processing chamber; and purging an inside of the plasma generator with the activated oxygen gas. Therefore, a supply of the activated chlorine gas can be kept constant during a film formation process. 플라스마 발생기 내에 있어서 염소 가스를 활성화하는 공정과, 처리실 내에 마련된 기판의 표면에 상기 활성화된 염소 가스를 흡착시켜, 흡착 저해기를 형성하는 공정과, 상기 기판의 표면의 상기 흡착 저해기가 형성되지 않은 영역에 실리콘 또는 금속과 염소를 함유하는 원료 가스를 흡착시키는 공정과, 상기 기판의 표면에 질화 가스를 공급하고, 상기 원료 가스와의 반응에 의해 질화막을 퇴적시키는 공정과, 상기 처리실로부터 상기 질화막이 퇴적한 상기 기판을 반출하는 공정과, 상기 플라스마 발생기 내를 활성화한 산소 가스로 퍼지하는 공정을 갖는 성막 방법.
Bibliography:Application Number: KR20200007084