Magnetic memory devices

The present invention relates to a spin-orbit torque based magnetic memory device capable of high integration. The magnetic memory device comprises: a line pattern on a substrate; a magnetic tunnel junction pattern on the line pattern; and an upper conductive line spaced apart from the line pattern...

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Bibliographic Details
Main Authors PARK JEONG HEON, LIM WOO CHANG, KIM WHANKYUN, JEONG JUNHO, LEE JOONMYOUNG
Format Patent
LanguageEnglish
Korean
Published 06.08.2020
Subjects
ELECTRICITY
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Summary:The present invention relates to a spin-orbit torque based magnetic memory device capable of high integration. The magnetic memory device comprises: a line pattern on a substrate; a magnetic tunnel junction pattern on the line pattern; and an upper conductive line spaced apart from the line pattern while interposing the magnetic tunnel junction pattern therebetween, and connected to the magnetic tunnel junction pattern. The line pattern is configured to apply spin-orbit torque to the magnetic tunnel junction pattern, and includes a chalcogen-based topological insulator. 자기 기억 소자는 기판 상의 라인 패턴, 상기 라인 패턴 상의 자기터널접합 패턴, 및 상기 자기터널접합 패턴을 사이에 두고 상기 라인 패턴으로부터 이격되고, 상기 자기터널접합 패턴에 연결되는 상부 도전 라인을 포함한다. 상기 라인 패턴은 상기 자기터널접합 패턴에 스핀 궤도 토크(spin-orbit torque)를 가하도록 구성되고, 상기 라인 패턴은 칼코겐 원소 기반의 위상 부도체(topological insulator)를 포함한다.
Bibliography:Application Number: KR20190010325