증착 소스를 냉각시키는 방법, 증착 소스를 냉각시키기 위한 챔버, 및 증착 시스템

• Main Authors: SCHNAPPENBERGER FRANK, ARMSTRONG CLAIRE, DEPPISCH THOMAS
• Format: Patent
• Language: Korean
• Published: 20.07.2020
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

증착 소스(200)를 냉각시키는 방법(100)이 설명된다. 이 방법은, 증착 소스로부터 재료를 증착하는 것을 중단하는 단계(110) - 증착 소스는 증착 챔버(250) 내에 배치됨 -, 및 냉각 가스를 증착 챔버(250) 내로 도입하는 단계(120)를 포함하며, 냉각 가스는 λ ≥ 0.05[W/(m*K)]인 열 전도율(λ)을 포함한다. 또한, 증착 소스를 냉각시키기 위한 챔버가 설명된다. 챔버는 챔버 내에 배치되는 증착 소스를 포함한다. 또한, 챔버는 챔버 내에 냉각 가스를 제공하도록 구성된 냉각 가스 공급 시스템을 포함하며, 냉각 가스는 λ ≥ 0.05[W/(m*K)]인 열 전도율(λ)을 포함한다. A method (100) of cooling a deposition source (200) is described. The method includes stopping (110) depositing material from the deposition source, the deposition source being arranged in a deposition chamber (250), and introducing (120) a cooling gas into the deposition chamber (250), the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)]. Further, a chamber for cooling a deposition source is described. The chamber includes a deposition source being arranged in the chamber. Further, the chamber includes a cooling gas supply system configured for providing a cooling gas into the chamber, the cooling gas comprising a thermal conductivity λ of λ≥0.05 [W/(m*K)].