ETCHANT COMPOSITION FOR ETCHING METAL NITRIDE LAYER AND METAL LAYER AND METHOD OF FORMING PATTERN USING THE SAME

• Main Authors: KIM MIN JUNG, YOO JAE SUNG, YOON HYO JOONG
• Format: Patent
• Language: English; Korean
• Published: 16.07.2020
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NATURAL RESINS; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PAINTS; POLISHES; SEMICONDUCTOR DEVICES

An etchant composition of embodiments of the present invention includes hydrogen peroxide, a polyether amine compound, and excess water. An etching selectivity between a metal nitride layer and a metal layer can be controlled through the content of the polyether amine compound. 본 발명의 실시예들의 식각액 조성물은 과산화수소, 폴리에테르 아민계 화합물, 및 여분의 물을 포함한다. 폴리에테르 아민계 화합물의 함량을 통해 금속 질화막 및 금속막 사이의 식각 선택비를 조절할 수 있다.