13 13 PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS AND METHOD FOR MANUFACTURING PERIODIC TABLE GROUP 13 METAL NITRIDE CRYSTALS

• Main Authors: KUBO SHUICHI, IKEDA HIROTAKA, FUJITO KENJI, NAGAO SATORU, ENATSU YUUKI
• Format: Patent
• Language: English; Korean
• Published: 07.07.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

비극성면 또는 반극성면을 주면으로서 성장한 주기표 제 13 족 금속 질화물 결정은, 적층 결함이 많이 존재한다. 이와 같은 적층 결함의 발생을 억제한 주기표 제 13 족 금속 질화물 결정을 제공하는 것을 과제로 한다. 결정의 (100) 면 X 선 역격자 매핑에 의해 얻어지는 등강도선도로부터 도출되는 최대 강도를 포함하는 Qx 방향의 강도 프로파일에 있어서, 피크 강도치에 대해 1/300 강도치를 나타내는 Qx 폭이 6 × 10rlu 이하인 주기표 제 13 족 금속 질화물 결정에 의해 과제를 해결한다. A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6x10 -4 rlu or less.