ETCHING SOLUTION AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE

The present invention relates to an etching solution for selectively etching a compound represented by chemical formula Si_1-xGe_x (wherein x is more than 0 and less than 1) with respect to Si, Ge, and oxides thereof and, more specifically, to an etching solution containing periodic acid and fluorid...

Full description

Saved in:
Bibliographic Details
Main Authors WADA YUKIHISA, OHHASHI TAKUYA, SUGAWARA MAI
Format Patent
LanguageEnglish
Korean
Published 07.07.2020
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:The present invention relates to an etching solution for selectively etching a compound represented by chemical formula Si_1-xGe_x (wherein x is more than 0 and less than 1) with respect to Si, Ge, and oxides thereof and, more specifically, to an etching solution containing periodic acid and fluoride. Si, Ge, 및 이들의 산화물에 대해 일반식 SiGe로 나타내는 화합물 (단, x 는 0 초과 1 미만이다) 을 선택적으로 에칭 처리하기 위한 에칭액으로서, 과요오드산과 불화물을 함유하는, 에칭액.
Bibliography:Application Number: KR20190174564