EL SPUTTERING TARGET MEMBER METHOD FOR PRODUCING SPUTTERING TARGET MEMBER SPUTTERING TARGET SPUTTERED FILM METHOD FOR PRODUCING SPUTTERED FILM FILM BODY LAMINATE STRUCTURE AND ORGANIC EL DEVICE
Provided is a sputtering target member suitable for obtaining a sputtering film having characteristics such as a high work function and a refractive index of 1.9 to 2.1 at a wavelength of 633 nm. The sputtering target member is formed of Ga, In, O, and inevitable impurities, where an atomic ratio of...
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Main Authors | , , , , |
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Format | Patent |
Language | English Korean |
Published |
06.07.2020
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Subjects | |
Online Access | Get full text |
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Summary: | Provided is a sputtering target member suitable for obtaining a sputtering film having characteristics such as a high work function and a refractive index of 1.9 to 2.1 at a wavelength of 633 nm. The sputtering target member is formed of Ga, In, O, and inevitable impurities, where an atomic ratio of Ga/In is equal to or more than 0.90 and equal to or less than 1.11. In surface analysis by an EPMA, an area ratio of a (Ga, In)_2O_3 phase to the entire crystal phase is equal to or more than 90%.
높은 일함수 및 파장 633㎚에 있어서의 굴절률 1.9∼2.1과 같은 특성을 갖는 스퍼터링막을 얻는 데 적합한 스퍼터링 타깃 부재를 제공한다. Ga, In, O 및 불가피적 불순물로 형성된 스퍼터링 타깃 부재이며, Ga/In의 원자비가 0.90 이상 1.11 이하이고, EPMA에 있어서의 면 분석에 있어서, 전체의 결정상에 대한 (Ga, In)O상의 면적률이 90% 이상이다. |
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Bibliography: | Application Number: KR20190104513 |