EL SPUTTERING TARGET MEMBER METHOD FOR PRODUCING SPUTTERING TARGET MEMBER SPUTTERING TARGET SPUTTERED FILM METHOD FOR PRODUCING SPUTTERED FILM FILM BODY LAMINATE STRUCTURE AND ORGANIC EL DEVICE

• Main Authors: KAKUTA KOJI, MOMOI HAJIME, NARA ATSUSHI, YAMAMOTO HIROYOSHI, ENDO YOSUKE
• Format: Patent
• Language: English; Korean
• Published: 06.07.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided is a sputtering target member suitable for obtaining a sputtering film having characteristics such as a high work function and a refractive index of 1.9 to 2.1 at a wavelength of 633 nm. The sputtering target member is formed of Ga, In, O, and inevitable impurities, where an atomic ratio of Ga/In is equal to or more than 0.90 and equal to or less than 1.11. In surface analysis by an EPMA, an area ratio of a (Ga, In)_2O_3 phase to the entire crystal phase is equal to or more than 90%. 높은 일함수 및 파장 633㎚에 있어서의 굴절률 1.9∼2.1과 같은 특성을 갖는 스퍼터링막을 얻는 데 적합한 스퍼터링 타깃 부재를 제공한다. Ga, In, O 및 불가피적 불순물로 형성된 스퍼터링 타깃 부재이며, Ga/In의 원자비가 0.90 이상 1.11 이하이고, EPMA에 있어서의 면 분석에 있어서, 전체의 결정상에 대한 (Ga, In)O상의 면적률이 90％ 이상이다.