HARDMASK COMPOSITION HARDMASK LAYER AND METHOD OF FORMING PATTERNS

The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method including a polymer including a structural unit represented by chemical formula 1 and a solvent. In chemical formula 1, the definitions of A and B are as described in the specification. 하기 화학식 1...

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Bibliographic Details
Main Authors JUNG HYEONIL, KIM SEUNGHYUN, PARK YUSHIN, PARK HYUNGSEOK, KIM SUNGHWAN
Format Patent
LanguageEnglish
Korean
Published 06.07.2020
Subjects
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOSITIONS BASED THEREON
COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
ORGANIC MACROMOLECULAR COMPOUNDS
SEMICONDUCTOR DEVICES
THEIR PREPARATION OR CHEMICAL WORKING-UP
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Summary:The present invention relates to a hardmask composition, a hardmask layer, and a pattern formation method including a polymer including a structural unit represented by chemical formula 1 and a solvent. In chemical formula 1, the definitions of A and B are as described in the specification. 하기 화학식 1로 표현되는 구조단위를 포함하는 중합체 및 용매를 포함하는 하드마스크 조성물, 하드마스크 층 및 패턴형성방법에 관한 것이다. [화학식 1]상기 화학식 1에서, A와 B의 정의는 명세서에 기재한 바와 같다.
Bibliography:Application Number: KR20180169795