RARE EARTH PRECURSORS PREPARATION METHOD THEREOF AND PROCESS FOR THE FORMATION OF THIN FILMS USING THE SAME

• Main Authors: KIM HYO SUK, PARK JUNG WOO, SEOK JANG HYEON
• Format: Patent
• Language: English; Korean
• Published: 29.06.2020
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The present invention relates to a compound capable of thin film deposition through vapor deposition and, specifically, to a rare earth compound, which is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and has excellent thermal stability and reactivity, a rare earth precursor comprising the same, a manufacturing method therefor, and a method for forming a thin film by using the same. The compound is represented by chemical formula 1. 본 발명은 기상 증착을 통하여 박막 증착할 수 있는 화합물에 관한 것으로서, 구체적으로는 원자층 증착법(Atomic Layer Deposition, ALD) 또는 화학 기상 증착법(Chemical Vapor Deposition, CVD)에 적용가능하고 열적 안정성 및 반응성이 우수한 희토류 화합물, 이를 포함하는 희토류 전구체, 이의 제조방법 및 이를 이용하여 박막을 형성하는 방법에 관한 것이다.