MEMORY DEVICE
The present invention discloses a memory device. According to one embodiment of the present invention, the memory device comprises a lower electrode, a seed layer, a synthetic exchange semi-magnetic layer, a magnetic tunnel junction and an upper electrode which are laminated on a substrate, wherein...
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Main Authors | , |
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Format | Patent |
Language | English Korean |
Published |
29.05.2020
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention discloses a memory device. According to one embodiment of the present invention, the memory device comprises a lower electrode, a seed layer, a synthetic exchange semi-magnetic layer, a magnetic tunnel junction and an upper electrode which are laminated on a substrate, wherein The magnetic tunnel junction includes a pinned layer, a tunnel barrier and a free layer. The free layer includes a first free layer, a spacer layer, a coupling layer, a buffer layer and a second free layer which are sequentially laminated.
본 발명은 메모리 소자를 개시한다. 본 발명의 실시예에 따른 메모리 소자는 기판 상에 형성되는 하부 전극, 시드층, 합성 교환 반자성층, 자기 터널 접합 및 상부 전극이 적층 되고, 상기 자기 터널 접합은 고정층, 터널 배리어층 및 자유층을 포함하며, 상기 자유층은 제1 자유층, 분리층(spacer layer), 결합층(coupling layer), 버퍼층(buffer layer) 및 제2 자유층이 순차적으로 적층으로 한다. |
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Bibliography: | Application Number: KR20180145610 |