SUBSTRATE PROCESSING METHOD SUBSTRATE PROCESSING APPARATUS AND STORAGE MEDIUM

An objective of the present invention is to precisely etch a silicon nitride film even when the silicon nitride film and a silicon oxide film are a highly stacked substrate. According to one embodiment of the present invention, a substrate processing method comprises an etching process for etching a...

Full description

Saved in:
Bibliographic Details
Main Authors HYAKUTAKE HIRONOBU, INADA TAKAO, KAWANO HISASHI
Format Patent
LanguageEnglish
Korean
Published 19.05.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

Be the first to leave a comment!
You must be logged in first