ETCHANT COMPOSITION FOR SILVER THIN LAYER ETCHING METHOD AND METHOD FOR FABRICATION METAL PATTERN USING THE SAME

• Main Authors: LEE EUN WON, CHO HYEON SU, KWON O BYOUNG
• Format: Patent
• Language: English; Korean
• Published: 18.05.2020
• Subjects: ADHESIVES; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; DYES; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NATURAL RESINS; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PAINTS; POLISHES

The present invention relates to an etchant composition for a silver thin film which includes (A) nitric acid, (B) at least one selected from the group consisting of iron-based compounds and peroxide oxidizers, (C) phosphoric acid, and (D) water. A galvanic current value measured between an aluminum (Al) electrode and a titanium (Ti) electrode used as source/drain (S/D) electrodes of an organic light emitting display (OLED) using the etchant composition as an electrolyte is 40 nA or less. Therefore, the present invention provides the etchant composition for a silver thin film that does not cause re-adsorption of silver (Ag) even when phosphoric acid is included as an oxidizing agent and has excellent etching properties for a single film made of silver (Ag) or a silver alloy and a multi-layer film composed of the single film and a transparent conductive film, and an etching method and a metal pattern forming method using the etchant composition. 본 발명은 은 박막 식각액 조성물에 관한 것으로, (A) 질산; (B) 철계화합물 및 과산화물 산화제로 이루어진 군으로부터 선택되는 1종 이상; (C) 인산; 및 (D) 물을 포함하는 은 박막 식각액 조성물로, 상기 식각액 조성물을 전해액으로 하여 유기발광디스플레이(OLED)의 S/D(소스/드레인) 전극으로 사용되는 알루미늄(Al) 전극과 티타늄(Ti) 전극 사이에서 측정된 갈바닉(Galvainc) 전류값이 40nA 이하인 은 박막 식각액 조성물, 이를 이용한 식각 방법 및 금속 패턴의 형성 방법을 제공한다.