MANUFACTURING APPARATUS FOR SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL

• Main Author: PARK MAN SHIK
• Format: Patent
• Language: English; Korean
• Published: 21.04.2020
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A manufacturing apparatus for a silicon carbide single crystal according to an embodiment includes: a crucible; a silicon carbide seed crystal extended into the crucible; a seed crystal shaft connected to the silicon carbide seed crystal; and an anti-shake member connected to the seed crystal shaft. The distance from one point of the seed crystal shaft to one surface of the seed crystal is less than the distance from one point of the seed crystal shaft to one surface of the anti-shake member. 일 실시예에 따른 실리콘카바이드 단결정의 제조 장치는 도가니, 상기 도가니 내부로 연장되는 실리콘카바이드 종결정, 상기 실리콘카바이드 종결정과 연결된 종결정축, 그리고 상기 종결정축에 연결된 떨림 방지 부재를 포함하며, 상기 종결정축의 일 지점으로부터 상기 종결정의 일면까지의 거리는, 상기 종결정축의 일 지점으로부터 상기 떨림 방지 부재의 일면까지의 거리보다 작다.