Method of sawing substrate and method of singulating semiconductor chips

Provided is a substrate sawing method, in a substrate having a device region and a scribe lane region, which comprises the steps of: selectively forming a passivation layer in the device region of the substrate; selectively forming a self-assembled monolayer which is self-assembled, on the passivati...

Full description

Saved in:
Bibliographic Details
Main Authors JEON CHANG SEONG, SHIN SEUNG HUN, YOO JAE KYUNG, LEE TEAK HOON
Format Patent
LanguageEnglish
Korean
Published 31.03.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:Provided is a substrate sawing method, in a substrate having a device region and a scribe lane region, which comprises the steps of: selectively forming a passivation layer in the device region of the substrate; selectively forming a self-assembled monolayer which is self-assembled, on the passivation layer; and conducting plasma sawing on the scribe lane region. 디바이스 영역과 스크라이브 레인 영역을 갖는 기판에 있어서, 상기 기판의 상기 디바이스 영역에 선택적으로 패시베이션 층을 형성하는 단계; 상기 패시베이션 층 상에 자기 조립적으로 자기 조립 모노레이어(self-assembled monolayer)를 선택적으로 형성하는 단계; 및 상기 스크라이브 레인 영역을 플라스마 쏘잉(plasma sawing)하는 단계를 포함하는 기판 쏘잉 방법이 제공된다.
Bibliography:Application Number: KR20180114376