4 4 OR MORE COMPONENT BASED CHALCOGENIDE PHASE-CHANGE MATERIAL AND MEMORY DEVICE COMPRISING THE SAME

• Main Authors: MINHO CHOI, KIM YONG TAE, KIM YOUNG HWAN, JHON YOUNG MIN, KWON SEHYUN, KIM CHUN KEUN
• Format: Patent
• Language: English; Korean
• Published: 17.03.2020
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; SEMICONDUCTOR DEVICES

The present invention provides a chalcogenide phase-change material represented by formula 1, and a memory device comprising the same, wherein formula 1 is M_a(A_xSb_yTe_(1-x-y))_b. In formula 1, M is an element in which the doping formation energy (ΔE_f) is −3 eV/atom or more and 0.5 eV/atom or less; A is indium (In) or germanium (Ge); a and b, as positive numbers, are selected to satisfy a + b = 1; x is 0.15 or more and 0.3 or less; and y is 0.05 or more and 0.25 or less. The chalcogenide phase-change material is thermodynamically stable compared to the conventional three component-based chalcogenide materials IST and GST. 본 발명은 하기 화학식 1로 표시되는, 칼코게나이드 상변화 물질 및 이를 포함하는 메모리 소자를 제공한다. [화학식 1] M(ASbTe)화학식 1에 있어서, M은 도핑 생성 에너지(ΔE)가 -3 eV/atom 이상 0.5 eV/atom 이하인 원소이고; A는 인듐(In) 또는 게르마늄(Ge)이며; a와 b는 각각 양수로서 a + b = 1을 만족하도록 선택되고; x는 0.15 이상 0.3 이하이며; y는 0.05 이상 0.25 이하이다.