SEMICONDUCTOR DEVICE

According to an embodiment of the present invention, disclosed is a semiconductor element capable of improving a low current yield and reducing operating voltage by adjusting a thickness of a first conductive semiconductor layer. The semiconductor element comprises: a first conductive semiconductor...

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Bibliographic Details
Main Authors KIM BYEOUNG JO, CHOI RAK JUN
Format Patent
LanguageEnglish
Korean
Published 12.03.2020
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to an embodiment of the present invention, disclosed is a semiconductor element capable of improving a low current yield and reducing operating voltage by adjusting a thickness of a first conductive semiconductor layer. The semiconductor element comprises: a first conductive semiconductor layer including Al; a second conductive semiconductor layer including Al; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and including Al. 실시 예는 제1 도전형 반도체층의 두께를 조절함으로써 저전류 수율을 개선하고 동작 전압을 낮출 수 있는 반도체 소자를 개시한다.
Bibliography:Application Number: KR20180105356