SOI METHOD FOR FORMING A SEMICONDUCTOR-ON-INSULATORSOI SUBSTRATE

Various embodiments of the present intention are to provide a method of forming a semiconductor-on-insulator (SOI) substrate having a thick device layer and a thick insulator layer. In some embodiments, the method includes: a step of forming an insulator layer covering a handle substrate; and a step...

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Bibliographic Details
Main Authors LU JIECH FUN, WU CHENG TA, LIU KUAN LIANG, TU YEUR LUEN, CHENG YU HUNG, TSAI CHIA SHIUNG, CHOU SHIH PEI
Format Patent
LanguageEnglish
Korean
Published 11.03.2020
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