SOI METHOD FOR FORMING A SEMICONDUCTOR-ON-INSULATORSOI SUBSTRATE
Various embodiments of the present intention are to provide a method of forming a semiconductor-on-insulator (SOI) substrate having a thick device layer and a thick insulator layer. In some embodiments, the method includes: a step of forming an insulator layer covering a handle substrate; and a step...
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Main Authors | , , , , , , |
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Format | Patent |
Language | English Korean |
Published |
11.03.2020
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Subjects | |
Online Access | Get full text |
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