CHALCOGENIDE MATERIAL AND ELECTRONIC DEVICE INCLUDING THE SAME

Provided are a chalcogenide material and an electronic apparatus. The chalcogenide material according to an embodiment of the present invention can contain: 0.1 to 5 at% of silicon (Si); 15 to 22 at% of germanium (Ge); 30 to 35 at% of arsenic (As); and 40 to 50 at% of selenium (Se). According to the...

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Bibliographic Details
Main Authors HWANG UK, KIM TAE HOON, JUNG GWANG SUN, BAN SANG HYUN, LEE WOO TAE, LEE BEOM SEOK
Format Patent
LanguageEnglish
Korean
Published 28.02.2020
Subjects
BASIC ELECTRIC ELEMENTS
CALCULATING
CHEMISTRY
COMPOUNDS THEREOF
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:Provided are a chalcogenide material and an electronic apparatus. The chalcogenide material according to an embodiment of the present invention can contain: 0.1 to 5 at% of silicon (Si); 15 to 22 at% of germanium (Ge); 30 to 35 at% of arsenic (As); and 40 to 50 at% of selenium (Se). According to the electronic apparatus including a semiconductor memory and a method for manufacturing the same according to embodiments of the present invention, it is possible to facilitate a process and improve electrical characteristics of a memory cell. 칼코게나이드 재료 및 전자 장치가 제공된다. 본 발명의 일 실시예에 따른 칼코게나이드 재료는 0.1~5 at%의 실리콘(Si), 15~22 at%의 게르마늄(Ge), 30~35 at%의 비소(As) 및 40~50 at%의 셀레늄(Se)을 포함할 수 있다.
Bibliography:Application Number: KR20180096778