반도체 가공용 테이프

• Main Authors: IWANAGA YUKIHIRO, YAMAZAKI TOMOHARU, OHKUBO KEISUKE
• Format: Patent
• Language: Korean
• Published: 10.02.2020
• Subjects: ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; PAINTS; POLISHES; SEMICONDUCTOR DEVICES; USE OF MATERIALS AS ADHESIVES

본 발명에 따른 반도체 가공용 테이프는, 기재층(基材層)과, 점착층과, 열경화성을 갖는 접착층이 이 순서로 적층되어 있고, 130℃에서 1시간의 경화 처리가 된 후에 있어서, 접착층의 수축률이 2% 미만이고 또한 접착층의 열시(熱時) 탄성률이 5 ㎫ 미만이다. 이 반도체 가공용 테이프는, 다이싱 다이본딩 테이프로서 사용할 수 있고, 예컨대, 반도체 장치의 제조 과정에 있어서의 임시 고정용 테이프로서도 사용할 수 있다. This tape for semiconductor processing includes a substrate layer, an adhesive layer, and a thermosetting adhesive layer, layered in this order. After being subjected to a curing treatment for 1 hour at 130°C, the shrinkage rate of the adhesive layer is less than 2% and the elastic modulus of the adhesive layer under a heated environment is less than 5 MPa. The tape for semiconductor processing can be used as a dicing/die-bonding tape, and also can be used as a tape for temporary anchoring during semiconductor device production, for instance.