SEMICONDUCTOR RESIST COMPOSITION AND METHOD OF FORMING PATTERNS USING THE COMPOSITION

본 기재는, 하기 화학식 1로 표현되는 유기금속 화합물 및 용매를 포함하는 반도체 레지스트용 조성물과, 이를 이용한 패턴 형성 방법에 관한 것이다. [화학식 1]화학식 1에 대한 구체적인 내용은 명세서 상에서 정의된 것과 같다. wherein L includes at least one alkylene group in the main chain. A pattern formed by using the semiconductor resist composition may not collapse while having a high aspect...

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Bibliographic Details
Main Authors NA, YOONG HEE, MOON, KYUNG SOO, CHEON, HWAN SUNG, NAMGUNG, RAN, KIM, JAE HYUN, CHAE, SEUNG YONG
Format Patent
LanguageEnglish
Korean
Published 10.02.2020
Subjects
ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
METALLURGY
ORGANIC CHEMISTRY
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
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Summary:본 기재는, 하기 화학식 1로 표현되는 유기금속 화합물 및 용매를 포함하는 반도체 레지스트용 조성물과, 이를 이용한 패턴 형성 방법에 관한 것이다. [화학식 1]화학식 1에 대한 구체적인 내용은 명세서 상에서 정의된 것과 같다. wherein L includes at least one alkylene group in the main chain. A pattern formed by using the semiconductor resist composition may not collapse while having a high aspect ratio.
Bibliography:Application Number: KR20180089413