산화물 소결체 및 그 제조 방법, 스퍼터 타겟, 산화물 반도체막, 그리고 반도체 디바이스의 제조 방법

• Main Authors: WATATANI KENICHI, TOMINAGA AIKO, TOKUDA KAZUYA, MIYANAGA MIKI, AWATA HIDEAKI
• Format: Patent
• Language: Korean
• Published: 29.01.2020
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CEMENTS; CERAMICS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; LIME, MAGNESIA; METALLURGY; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TREATMENT OF NATURAL STONE

In, W 및 Zn을 포함하고, InO결정상 및 In(ZnO)O결정상(m은 자연수를 나타낸다)을 포함하고, 인듐 원자에 배위하는 산소의 평균 배위수가 3 이상 5.5 미만인 산화물 소결체 및 그 제조 방법, 그리고 In, W 및 Zn을 포함하고, 비정질이며, 인듐 원자에 배위하는 산소의 평균 배위수가 2 이상 4.5 미만인 산화물 반도체막이 제공된다. There are provided an oxide sintered material and a method of manufacturing the same as well as an oxide semiconductor film. The oxide sintered material contains In, W and Zn, includes an In2O3 crystal phase and an In2(ZnO)mO3 crystal phase (m represents a natural number), and an average number of oxygen atoms coordinated to an indium atom is 3 or more and less than 5.5. The oxide semiconductor film contains In, W and Zn. The oxide semiconductor film is amorphous, and an average number of oxygen atoms coordinated to an indium atom is 2 or more and less than 4.5.