EUV EUV METALLIC RESIST PERFORMANCE ENHANCEMENT VIA ADDITIVES

The present invention relates to an extreme ultraviolet (EUV) metal resist performance enhancement using an additive. In the present invention, a photoresist layer is formed on a wafer and comprises a metal photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography proc...

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Bibliographic Details
Main Authors ZI AN REN, CHANG CHING YU, CHENG JOY
Format Patent
LanguageEnglish
Korean
Published 26.12.2019
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:The present invention relates to an extreme ultraviolet (EUV) metal resist performance enhancement using an additive. In the present invention, a photoresist layer is formed on a wafer and comprises a metal photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using a photoresist layer. In addition, the one or more additives comprises: a solvent having a boiling point above about 150°C; a photo-acid generator; a photo-base generator; a quencher; photolysis bases; a thermal acid generator; or a photosensitive cross-linker. 본 발명에서는, 포토레지스트 층이 웨이퍼 위에 형성된다. 포토레지스트 층은 금속 포토레지스트 재료 및 하나 이상의 첨가제를 포함한다. 극자외선(EUV) 리소그래피 공정이 포토레지스트 층을 이용하여 수행된다. 하나 이상의 첨가제는 비점이 약 150℃ 초과인 용매, 광산 발생제, 광염기 발생제, 켄쳐, 광분해 염기, 열산 발생제 또는 감광성 가교제를 포함한다.
Bibliography:Application Number: KR20190070165