EUV EUV METALLIC RESIST PERFORMANCE ENHANCEMENT VIA ADDITIVES
The present invention relates to an extreme ultraviolet (EUV) metal resist performance enhancement using an additive. In the present invention, a photoresist layer is formed on a wafer and comprises a metal photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography proc...
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Main Authors | , , |
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Format | Patent |
Language | English Korean |
Published |
26.12.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to an extreme ultraviolet (EUV) metal resist performance enhancement using an additive. In the present invention, a photoresist layer is formed on a wafer and comprises a metal photoresist material and one or more additives. An extreme ultraviolet (EUV) lithography process is performed using a photoresist layer. In addition, the one or more additives comprises: a solvent having a boiling point above about 150°C; a photo-acid generator; a photo-base generator; a quencher; photolysis bases; a thermal acid generator; or a photosensitive cross-linker.
본 발명에서는, 포토레지스트 층이 웨이퍼 위에 형성된다. 포토레지스트 층은 금속 포토레지스트 재료 및 하나 이상의 첨가제를 포함한다. 극자외선(EUV) 리소그래피 공정이 포토레지스트 층을 이용하여 수행된다. 하나 이상의 첨가제는 비점이 약 150℃ 초과인 용매, 광산 발생제, 광염기 발생제, 켄쳐, 광분해 염기, 열산 발생제 또는 감광성 가교제를 포함한다. |
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Bibliography: | Application Number: KR20190070165 |