METHOD OF ETCHING FILM AND PLASMA PROCESSING APPARATUS

In a method for etching a film of an exemplary embodiment, a monomolecular layer of a precursor is formed on a film. The film has a lateral sidewall and a bottom side defining an opening. The film is etched by a chemical species from plasma formed by treatment gas. During etching of the film, a prot...

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Bibliographic Details
Main Author KATSUNUMA TAKAYUKI
Format Patent
LanguageEnglish
Korean
Published 06.12.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In a method for etching a film of an exemplary embodiment, a monomolecular layer of a precursor is formed on a film. The film has a lateral sidewall and a bottom side defining an opening. The film is etched by a chemical species from plasma formed by treatment gas. During etching of the film, a protective area is formed from the monomolecular layer by the chemical species from the plasma or a separate chemical species from the plasma. The protective area does not clog the opening of the film. 예시적 실시형태에 관한 막을 에칭하는 방법에서는, 전구체의 단분자층이 막 상에 형성된다. 막은 개구를 구획하는 측벽면 및 바닥면을 갖고 있다. 처리 가스로 형성된 플라즈마로부터의 화학 종에 의해 막이 에칭된다. 막의 에칭 중에, 플라즈마로부터의 화학 종 또는 플라즈마로부터의 별도의 화학 종에 의해 단분자층으로부터 보호영역이 형성된다.
Bibliography:Application Number: KR20190060375