METHODS FOR FORMING A DOPED METAL CARBIDE FILM ON A SUBSTRATE AND RELATED SEMICONDUCTOR DEVICE STRUCTURES

• Main Authors: JOHNSON WARD, RAISANEN PETRI, HSU PENG FU, LI DONG, CHEN XICHONG, MOUSA MOATAZ BELLAH
• Format: Patent
• Language: English; Korean
• Published: 20.11.2019
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A method for depositing a doped metal carbide film on a substrate is disclosed. The method can include a step of depositing a doped metal carbide film on a substrate by using at least one deposition cycle of a cyclical deposition process; and a step of allowing the doped metal carbide film to be in...