n형 실리콘 단결정의 제조 방법, n형 실리콘 단결정의 잉곳, 실리콘 웨이퍼 및, 에피택셜 실리콘 웨이퍼

• Main Authors: MAEGAWA KOICHI, OGAWA FUKUO, NARUSHIMA YASUHITO, KIHARA AYUMI, KAWAKAMI YASUFUMI
• Format: Patent
• Language: Korean
• Published: 08.11.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

적인을 주된 도펀트로서 포함하는 실리콘 융액(9)으로부터, 초크랄스키법에 의해 실리콘 단결정(10)을 인상하여 성장시키는 n형 실리콘 단결정의 제조 방법은, 실리콘 단결정(10)의 직동 지름에 대하여, 내경이 1.7배 이상, 2.3배 이하인 석영 도가니(3A)를 이용하여, 전기 저항률이 0.5mΩ㎝ 이상, 1.0mΩ㎝ 이하인 실리콘 단결정(10)의 인상을 행한다. A method for producing an n-type monocrystalline silicon that includes pulling up a monocrystalline silicon from a silicon melt containing a main dopant in a form of red phosphorus to grow the monocrystalline silicon. The monocrystalline silicon exhibits an electrical resistivity ranging from 1.7 mΩcm to 2.0 mΩcm, and is pulled up using a quartz crucible whose inner diameter ranges from 1.7-fold to 2.0-fold relative to a straight-body diameter of the monocrystalline silicon.