SEMICONDUCTOR DEVICE AND MANUFACTURING
The present invention relates to a method of manufacturing a high voltage semiconductor device. According to the present invention, the method of manufacturing a high voltage semiconductor device comprises the steps of exposing a semiconductor substrate to a plasma to form a protective material laye...
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Main Authors | , , , , , , , , |
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Format | Patent |
Language | English Korean |
Published |
06.11.2019
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Subjects | |
Online Access | Get full text |
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Summary: | The present invention relates to a method of manufacturing a high voltage semiconductor device. According to the present invention, the method of manufacturing a high voltage semiconductor device comprises the steps of exposing a semiconductor substrate to a plasma to form a protective material layer on the substrate. The semiconductor device comprises the semiconductor substrate and the protective material layer on the semiconductor substrate.
고전압 반도체 장치를 제조하는 방법은 반도체 기판을 플라즈마에 노출시켜 기판 상에 보호 물질 층을 형성하는 단계를 포함한다. 반도체 장치는 반도체 기판 및 이 반도체 기판 상의 보호 물질 층을 포함한다. |
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Bibliography: | Application Number: KR20190048405 |