SEMICONDUCTOR DEVICE AND MANUFACTURING

The present invention relates to a method of manufacturing a high voltage semiconductor device. According to the present invention, the method of manufacturing a high voltage semiconductor device comprises the steps of exposing a semiconductor substrate to a plasma to form a protective material laye...

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Bibliographic Details
Main Authors KOCH PHILIPP SEBASTIAN, KOPROWSKI ANGELIKA, MAIER CHRISTIAN, SCHMIDT GERHARD, STEINBRENNER JUERGEN, HUMBEL OLIVER, LEITL BERNHARD, JOSHI RAVI KESHAV, KAHN MARKUS
Format Patent
LanguageEnglish
Korean
Published 06.11.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a method of manufacturing a high voltage semiconductor device. According to the present invention, the method of manufacturing a high voltage semiconductor device comprises the steps of exposing a semiconductor substrate to a plasma to form a protective material layer on the substrate. The semiconductor device comprises the semiconductor substrate and the protective material layer on the semiconductor substrate. 고전압 반도체 장치를 제조하는 방법은 반도체 기판을 플라즈마에 노출시켜 기판 상에 보호 물질 층을 형성하는 단계를 포함한다. 반도체 장치는 반도체 기판 및 이 반도체 기판 상의 보호 물질 층을 포함한다.
Bibliography:Application Number: KR20190048405