반도체 나노 입자 및 그 제조 방법 및 발광 디바이스

• Main Authors: KISHI MARINO, UEMATSU TARO, TORIMOTO TSUKASA, OYAMATSU DAISUKE, MIYAMAE CHIE, KAMEYAMA TATSUYA, KUWABATA SUSUMU, NIKI KENTA
• Format: Patent
• Language: Korean
• Published: 05.11.2019
• Subjects: ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NANOTECHNOLOGY; NATURAL RESINS; PAINTS; PERFORMING OPERATIONS; POLISHES; SEMICONDUCTOR DEVICES; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; TRANSPORTING

밴드단 발광을 나타내고, 단파장의 발광 피크 파장을 갖는 반도체 나노 입자가 제공된다. 반도체 나노 입자는, Ag, In, Ga 및 S를 포함하고, In과 Ga의 원자수의 합계에 대한 Ga의 원자수의 비가 0.95 이하이다. 또한 반도체 나노 입자는, 500㎚ 이상 590㎚ 미만의 범위에 발광 피크 파장을 갖고, 발광 피크의 반값폭이 70㎚ 이하인 광을 발하고, 평균 입경이 10㎚ 이하이다. Semiconductor nanoparticles including Ag, In, Ga, and S are provided. In the semiconductor nanoparticles, a ratio of a number of Ga atoms to a total number of In and Ga atoms is 0.95 or less. The semiconductor nanoparticles emit light having an emission peak with a wavelength in a range of from 500 nm to less than 590 nm, and a half bandwidth of 70 nm or less, and have an average particle diameter of 10 nm or less.