ETCHING COMPOSITION FOR SILICONE NITRIDE AND METHOD FOR ETCHING USING THE SAME

The present invention relates to a silicon nitride film etching composition, which comprises: a phosphoric acid compound; polyhydric alcohol; and water. The silicon nitride film etching composition has high selectivity ratio of a silicon nitride film to a silicon oxide film, and suppresses precipita...

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Bibliographic Details
Main Authors KOH SANG RAN, CHOI JUNG MIN, CHO YOUN JIN, HWANG KI WOOK
Format Patent
LanguageEnglish
Korean
Published 21.10.2019
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Summary:The present invention relates to a silicon nitride film etching composition, which comprises: a phosphoric acid compound; polyhydric alcohol; and water. The silicon nitride film etching composition has high selectivity ratio of a silicon nitride film to a silicon oxide film, and suppresses precipitation of a silicone compound. 본 발명의 실리콘 질화막 에칭 조성물은 인산 화합물; 다가알코올; 및 물을 포함한다. 상기 실리콘 질화막 에칭 조성물은 실리콘산화막에 대한 실리콘 질화막의 선택비가 높고, 실리콘 화합물의 석출을 억제할 수 있다.
Bibliography:Application Number: KR20180042408