Manufacturing method of a semiconductor device and manufacturing apparatus used therein

According to the present invention, a manufacturing method of a semiconductor device comprises the steps of: forming a doped polysilicon layer on a substrate; forming a barrier layer on the doped polysilicon layer; forming an insertion layer on the barrier layer; plasma-processing a single layer of...

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Bibliographic Details
Main Authors LEE IN HEE, KIM EUN TAE, KIM SUK HOON, LEE HYE LAN, YOU NAM GIL, KONG MYUNG HO, HONG HYUNG SEOK, CHUNG KYUNG JAE
Format Patent
LanguageEnglish
Korean
Published 27.09.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to the present invention, a manufacturing method of a semiconductor device comprises the steps of: forming a doped polysilicon layer on a substrate; forming a barrier layer on the doped polysilicon layer; forming an insertion layer on the barrier layer; plasma-processing a single layer of the insertion layer or a composite layer of the insertion layer and the barrier layer to form a base layer; and forming a metal layer on the base layer to complete a wiring layer. 본 발명의 반도체 소자의 제조 방법은 기판 상에 도핑된 폴리실리콘층을 형성하는 단계; 상기 도핑된 폴리실리콘층 상에 배리어층을 형성하는 단계; 상기 배리어층 상에 삽입층을 형성하는 단계; 상기 삽입층의 단일층이나 상기 삽입층 및 배리어층의 복합층을 플라즈마 처리하여 베이스층을 형성하는 단계; 및 상기 베이스층 상에 금속층을 형성하여 배선층을 완성하는 단계를 포함한다.
Bibliography:Application Number: KR20180031713