Lanthanum compound and methods of forming thin film and integrated circuit device

• Main Authors: LIM JAE SOON, CHO YOUN JOUNG, YAMADA NAOKI, KIM YOUN SOO, HARANO KAZUKI, SATO HARUYOSHI, PARK GYU HEE, SHIRATORI TSUBASA
• Format: Patent
• Language: English; Korean
• Published: 25.09.2019
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMISTRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES

According to the present invention, a lanthanum compound is represented by formula 1 in which R^1 is a hydrogen atom or a straight or branched alkyl group of C1-C4, each of R^2 and R^3 is a hydrogen atom or a straight or branched alkyl group of C1-C5, at least one of R^2 and R^3 is a branched alkyl group of C3-C5, and R^4 is a hydrogen atom or a straight or branched alkyl group of C1-C4. In order to form a thin film, a lanthanum-containing film is formed on a substrate by using the lanthanum compound of formula 1. The present invention forms a lower structure on a substrate to manufacture an integrated circuit device and forms the lanthanum-containing film on the lower structure by using the lanthanum compound of formula 1. The present invention provides good step coverage characteristics. 란타넘 화합물은 다음 식 (1)로 표시된다. 식 (1)식 (1)에서, R은 수소 원자 또는 C1-C4의 직쇄 또는 분기형 알킬기이고, R및 R는 각각 수소 원자 또는 C1-C5의 직쇄 또는 분기형 알킬기이고, R및 R중 적어도 하나는 C3-C5의 분기형 알킬기이고, R는 수소 원자 또는 C1-C4의 직쇄 또는 분기형 알킬기이다. 박막을 형성하기 위하여, 식 (1)의 란타넘 화합물을 사용하여 기판 위에 란타넘 함유막을 형성한다. 집적회로 소자를 제조하기 위하여 기판 상에 하부 구조물을 형성하고, 식 (1)의 란타넘 화합물을 사용하여 상기 하부 구조물 상에 란타넘 함유막을 형성한다.