4 - GROUP 4 METAL ELEMENT-CONTAINING COMPOUND PREPARING METHOD THEREOF PRECURSOR COMPOSITION INCLUDING THE SAME FOR FORMING LAYER AND METHOD FOR FORMING LAYER USING THE SAME

• Main Authors: PARK MYEONG HO, HAN WON SEOK, KOH WONYONG
• Format: Patent
• Language: English; Korean
• Published: 16.08.2019
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; ORGANIC CHEMISTRY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

Provided are a novel group 4 metal element-containing compound, a manufacturing method for the group 4 metal element-containing compound, a precursor composition for forming a film comprising the group 4 metal element-containing compound, and a method for forming the group 4 metal element-containing film by using the group 4 metal element-containing compound. According to embodiments of the present application, an atomic layer deposition method using the novel group 4 metal element-containing compound has the advantage of being able to form the group 4 metal element-containing film at a higher temperature than conventionally known group 4 metal element-containing compounds. 신규한 4 족 금속 원소-함유 화합물, 상기 4 족 금속 원소-함유 화합물의 제조 방법, 상기 4 족 금속 원소-함유 화합물을 포함하는 막 형성용 전구체 조성물, 및 상기 4 족 금속 원소-함유 화합물을 이용하는 4 족 금속 원소-함유 막의 형성 방법을 제공한다. 본원의 구현예들에 따른 신규한의 4족 금속 원소-함유 화합물을 사용하는 원자층 증착법에 의하여 종래 알려진 4족 금속 원소-함유 화합물보다 더 높은 온도에서 4족 금속 원소-함유 막을 형성할 수 있는 장점이 있다.