탄소 임플란트를 위한 삼플루오린화 인

• Main Authors: COLVIN NEIL, HSIEH TSEH JEN
• Format: Patent
• Language: Korean
• Published: 01.08.2019
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F; COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS; COMPOUNDS THEREOF; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

탄소 이온 주입을 위한 공정 및 시스템은 이온 소스 챔버에서 탄소 산화물 가스와 함께 공동 가스로서 삼플루오린화 인을 이용하는 단계를 포함하고, 일부 실시예에서, 란탄화된 텅스된 합금 이온 소스 구성요소와 조합하여 유리하게는 캐소드 및 캐소드 쉴드의 산화를 최소화시킨다. 또한 할로겐 사이클, 즉 WF형성의 현저한 감소뿐만 아니라 아크 챔버 내부 구성 요소 상에 허용 가능한 수준의 탄소 침적이 관찰되었다. Processes and systems for carbon ion implantation include utilizing phosphorous trifluoride (PF3) as a co-gas with carbon oxide gas, and in some embodiments, in combination with the lanthanated tungsten alloy ion source components advantageously results in minimal oxidation of the cathode and cathode shield. Moreover, acceptable levels of carbon deposits on the arc chamber internal components have been observed as well as marked reductions in the halogen cycle, i.e., WFx formation.