Semiconductor Device having a Structure for Insulating Layer under Metal Line

The semiconductor device is disclosed. The semiconductor device includes: a via plug formed on a substrate; and a wiring metal layer formed at the end of the via plug. An insulating structure is disposed on the lower side of a metal layer for a line. The insulating structure has a different layered...

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Bibliographic Details
Main Authors CHOI MIN JUN, KIM KWAN SIK, KWON DOO WON, YOON SUNG HYUN, SONG TAE YOUNG
Format Patent
LanguageEnglish
Korean
Published 02.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The semiconductor device is disclosed. The semiconductor device includes: a via plug formed on a substrate; and a wiring metal layer formed at the end of the via plug. An insulating structure is disposed on the lower side of a metal layer for a line. The insulating structure has a different layered structure according to a positional relationship with the metal layer for a line. It is possible to improve the electrical properties and reliability of the semiconductor device. 기판에 형성된 비아 플러그; 및 상기 비아 플러그의 단부에 형성된 배선용 금속층;을 포함하고, 상기 배선용 금속층의 하부에 절연 구조물이 배치되되, 상기 절연 구조물은 상기 배선용 금속층과의 위치 관계에 따라 서로 다른 층상 구조를 갖는 반도체 장치가 개시되어 있다.
Bibliography:Application Number: KR20170178361