SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device having a fast address access time is provided. The semiconductor memory device has a plurality of memory cells and a word line coupled to the plurality of memory cells. The word line is disposed along a first direction. Each of the plurality of memory cells includes a g...

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Bibliographic Details
Main Authors NII KOJI, YABUUCHI MAKOTO
Format Patent
LanguageEnglish
Korean
Published 01.07.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Summary:A semiconductor memory device having a fast address access time is provided. The semiconductor memory device has a plurality of memory cells and a word line coupled to the plurality of memory cells. The word line is disposed along a first direction. Each of the plurality of memory cells includes a gate electrode disposed along a second direction crossing the first direction. 어드레스 액세스 시간이 빠른 반도체 기억 장치를 제공하는 것에 있다. 반도체 기억 장치는, 복수의 메모리 셀과, 상기 복수의 메모리 셀에 결합된 워드선을 갖는다. 상기 워드선은, 제1 방향을 따라서 배치된다. 상기 복수의 메모리 셀의 각각은, 상기 제1 방향과 교차하는 제2 방향을 따라서 배치된 게이트 전극을 포함한다.
Bibliography:Application Number: KR20180164297