APPARATUS FOR GROWING SAPPHIRE SINGLE CRYSTAL

• Main Authors: LEE, HUI CHOON, CHOI YI SIK, MOON SUNG HWAN, KIM HYUNG JOONG, KIM JUN HWAN
• Format: Patent
• Language: English; Korean
• Published: 28.06.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

The present invention relates to an apparatus for growing a sapphire single crystal, which has a crucible reinforcing member having a change in the thickness to prevent deformation of a crucible, and to increase a vertical temperature gradient of the crucible. The apparatus for growing a sapphire single crystal of the present invention comprises: a chamber forming member; an inner refractory disposed inside the chamber forming member; a crucible disposed inside the inner refractory, and charging an alumina raw material to grow a sapphire single crystal; a heating element disposed outside a crucible to melt the alumina raw material charged into the crucible; and a crucible reinforcement member disposed between the heating element and the crucible, and preventing deformation of the crucible. The crucible reinforcement member has the thickness narrower toward an upper side thereof. 본 발명은 두께 변화가 있는 도가니 보강부재가 구비되어 도가니의 변형을 방지하면서 동시에 도가니의 상하 온도구배를 증가시킬 수 있는 사파이어 단결정 성장장치에 관한 것이다. 본 발명의 사파이어 단결정 성장장치는 챔버형성부재; 상기 챔버형성부재 내부에 배치되는 내화물; 상기 내화물의 내부에 배치되고 알루미나 원료가 장입되어 사파이어 단결정을 성장시키는 도가니; 상기 도가니의 외측에 배치되어 도가니에 장입된 알루미나 원료를 용융시키는 발열체; 및 상기 발열체와 도가니 사이에 배치되어 도가니의 변형을 방지하는 도가니 보강부재를 포함하며,상기 도가니 보강부재는 상측으로 갈수록 두께가 좁아지는 것을 특징으로 한다.