SEMICONDUCTOR IMAGE SENSOR

A back side illumination (BSI) image sensor comprises: a substrate including a front side surface and a rear side surface on the opposite side of the front side surface; and a plurality of pixel sensors arranged in an array. Each of the pixel sensors includes: a light sensing device inside the subst...

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Main Authors CHOU KENG YU, CHUANG CHUN HAO, WU WEN HAU, CHIANG WEI CHIEH, HASHIMOTO KAZUAKI, TSENG CHIEN HSIEN
Format Patent
LanguageEnglish
Korean
Published 03.04.2019
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A back side illumination (BSI) image sensor comprises: a substrate including a front side surface and a rear side surface on the opposite side of the front side surface; and a plurality of pixel sensors arranged in an array. Each of the pixel sensors includes: a light sensing device inside the substrate; a color filter on the upper side of the pixel sensor on the rear side surface; and an optical structure on the upper side of the color filter on the rear side surface. The optical structure includes a first sidewall, and a plane substantially parallel to the first sidewall and the front surface of the substrate forms an insertion angle greater than 0 degrees. 후면 조사(BSI) 이미지 센서는, 전방 측면 및 그 전방 측면과 반대 쪽에 있는 후방 측면을 포함하는 기판, 및 어레이로 배열된 복수의 픽셀 센서들을 포함한다. 픽셀 센서들의 각각은, 기판 내의 광 감지 디바이스와, 후방 측면 상의 픽셀 센서 위의 컬러 필터, 및 후방 측면 상의 컬러 필터 위의 광학 구조물을 포함한다. 광학 구조물은 제1 측벽을 포함하고, 제1 측벽과 기판의 전면과 실질적으로 평행한 평면은 0°보다 큰 끼인각을 형성한다.
Bibliography:Application Number: KR20180113647