REFLECTIVE MASK BLANK REFLECTIVE MASK AND PROCESS FOR PRODUCING REFLECTIVE MASK BLANK

The present invention relates to a reflective mask blank having an absorbing layer having excellent cleaning resistance in the production of a reflective mask, a reflective mask, and a production method of a reflective mask blank. The reflective mask blank (10A) has a reflective layer (12) for refle...

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Bibliographic Details
Main Author TANABE HIROYOSHI
Format Patent
LanguageEnglish
Korean
Published 29.03.2019
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:The present invention relates to a reflective mask blank having an absorbing layer having excellent cleaning resistance in the production of a reflective mask, a reflective mask, and a production method of a reflective mask blank. The reflective mask blank (10A) has a reflective layer (12) for reflecting an EUV light and the absorbing layer (14) for absorbing the EUV light on a substrate (11) in this order from a substrate side. In addition, the absorbing layer (14) comprises Sn as a main component and further comprises 25 at% or more of Ta. 반사형 마스크의 제조 시의 세정 내성이 우수한 흡수층을 구비하는 반사형 마스크 블랭크를 제공한다. 반사형 마스크 블랭크(10A)는, 기판(11) 위에 EUV 광을 반사하는 반사층(12)과, EUV 광을 흡수하는 흡수층(14)을 기판측부터 이 순서대로 갖는 반사형 마스크 블랭크이며, 흡수층(14)은, Sn을 주 성분으로서 함유하며, 또한 Ta를 25at％ 이상 함유한다.
Bibliography:Application Number: KR20180111383